Aluminium oxide wafers |
Aluminium oxide wafers
AOS 218 247
TO 218, TO 247, 25 x 21 x 3 mm, other strengths and versions on request
- thermal resistance:0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
- dielectric strength:10 kV/mm
Features
| for transistor: | TO 218
|
| material: | AL2O3 - ceramics
|
| thickness: | 3 mm
|
| specific electrical resistance: | >1014 Ω/cm
|
| thermal conductivity: | 25 W/m·K
|
| dielectric constant: | 9
|
| linear expansion coefficient: | ~8·10-6/K
|
| flatness: | 0.02 mm
|
| thermal resistance: | 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
|
| dielectric strength: | 10 kV/mm
|
Technical Drawing
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Data sheet
FRI 7:30 - 15:15